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CM1213A LM339 4LVTH1 NDTD4812 24D05 WM8727ED 1546I LJ320U27
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  chip schottky barrier diodes silicon epitaxial planer type 0.185(4.8) 0.177(4.4) 0.012(0.3) typ. 0.110(2.8) 0.094(2.4) 0.165(4.2) 0.150(3.8) 0.067(1.7) 0.060(1.5) 0.040 (1.0) typ. 0.040(1.0) typ. dimensions in inches and (millimeters) sma features plastic package has underwrit ers laboratory flammability classification 94v -o ut iliz ing flame retardant epox y m olding compound. for surfac e mounted applications. ex ceeds environmental standar ds of mi l-s-19500 / 228 low leakage current . mechanical dat a case : mol ded plastic, jed ec do-214ac termi nals : solder plated, solderable per mil-st d-750, method 2026 pol arity : indicated by c athode band mounting p osition : any weight : 0.0015 ounce, 0.05 gram FM320-A thru fm3100-a f o r m o s a m s (v) (v) (v) (v) ( o c) FM320-A ss32 20 14 20 fm330-a ss33 30 21 30 fm340-a ss34 40 28 40 fm350-a ss35 50 35 50 fm360-a ss36 60 42 60 fm380-a ss38 80 56 80 fm3100-a s310 100 70 100 symbols marking code operating temperature v rrm *1 v rms *2 v r *3 v f *4 0.50 0.75 0.85 -55 to +125 -55 to +150 maximum ratings (at t a =25 o c unless otherwise noted) parameter conditions symbol min. typ. max. unit forward rectified current see fig.1 i o 3.0 a forward surge current 8.3ms single half sine-wave superimposed on rate load (jedec methode) i fsm 80 a v r = v rrm t a = 25 o c 0.5 ma v r = v rrm t a = 125 o c 20 ma thermal resistance junction to ambient r q ja 80 o c / w diode junction capacitance f=1mhz and applied 4vdc reverse voltage c j 250 pf storage temperature t stg -55 +150 o c reverse current i r *1 repetitive peak reverse voltage *2 rms voltage *3 continuous reverse voltage *4 maximum forward voltage
0.1 1.0 .01 10 50 rating and characteristic curves (FM320-A thru fm3100-a) fig.1-typical forward current dera ting curve a v e r a g e f o r w a r d c u r r e n t , ( a ) fig.4-typical junction capacit ance reverse voltage,(v) j u n c t i o n c a p a c i t a n c e , ( p f ) i n s t a n t a n e o u s f o r w a r d c u r r e n t , ( a ) forward volt age,(v) pulse width 300us 1% duty cycle 0.5 1.0 1.5 2.0 2.5 3.0 700 600 500 400 300 200 100 0 .01 .05 .1 .5 1 5 10 50 100 .1 .3 .5 .7 .9 1.1 1.3 1.5 3.0 .1 1.0 10 100 fig.5 - typical reverse characteristics r e v e r s e l e a k a g e c u r r e n t , ( m a ) 0 20 40 60 80 100 120 140 .01 tj=75 c f m 3 2 0 -a ~ f m 3 4 0 -a f m 3 5 0 -a ~ f m 3 1 0 0 -a f m 35 0- a ~ f m 36 0- a f m 38 0- a ~ f m 31 00 -a fm 32 0- a ~f m 34 0- a tj=25 c tj=25 c ambient temperature,( c) 0 0 20 40 60 80 100 120 140 160 180 200 fig.2-typical forward characteristics percent of rated peak reverse vol tage,(%) fig.3-maximum non-repetitive forward surge current p e a k f o r w a a r d s u r g e c u r r e n t , ( a ) 0 40 20 60 100 80 number of cycles at 60hz 1 10 5 50 100 tj=25 c 8.3ms single half sine wave jedec method


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